发明名称 |
Doped amorphous silicon photoconductive device having a protective coating |
摘要 |
A photoconductive device including a conductive substrate, a photoconductive layer of amorphous silicon containing at least hydrogen and a surface protection layer applied on the photoconductive layer a dopant is added in the photoconductive layer at least near the interface with the surface protection layer, and the concentration of the dopant increases in the direction perpendicular to the interface. The surface protection layer has an optical energy gap larger than that of the photoconductive layer. A further photoconductive device comprising a conductive substrate; a photoconductive layer of amorphous silicon applied on the conductive substrate and a surface protection layer of amorphous silicon applied on said photoconductive layer wherein the surface protection layer contains oxygen, and is doped with a IIIb element.
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申请公布号 |
US4683186(A) |
申请公布日期 |
1987.07.28 |
申请号 |
US19850786046 |
申请日期 |
1985.10.10 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
OHASHI, KUNIO;TONEGAWA, TADASHI;NAGATA, SHOICHI;NAKAMURA, MASATSUGU |
分类号 |
G03G5/082;H01L31/09;H01L31/20;(IPC1-7):G03C5/08;G03C5/04 |
主分类号 |
G03G5/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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