发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <p>PURPOSE:To improve the read speed of data by detecting changes in address, controlling a transistor (TR) in a sense amplifier and charging/discharging rapidly the parasitic capacitance of a bit line. CONSTITUTION:When data is written in a cell TR Tcoo, the data is read by a Schmitt circuit comprising TRs 7-10 and a TR 4 is turned off by a potential rise at a point (d). Since the TR 6 is also turned off, a current flowing to the TR Tcoo via the TR 3 is lost and the current discharged from the bit line parasitic capacitance Co to the TR Tcoo is increased. When the Tcoo with no data written is selected,, the TR 6 having large mutual inductance is turned on momentarily by a signal phi generated at the change time in the address signal, the capacitor Co is charged quickly to improve the read speed.</p>
申请公布号 JPS62170097(A) 申请公布日期 1987.07.27
申请号 JP19860008962 申请日期 1986.01.21
申请人 FUJITSU LTD 发明人 YOSHIDA MASANOBU
分类号 G11C17/00;G11C7/10;G11C16/06 主分类号 G11C17/00
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