发明名称 |
DETECTOR OF SECONDARY OR BACKWARD SCATTERED ELECTRONS IN ELECTRONIC APPARATUS |
摘要 |
An electron beam apparatus has a primary beam directed onto a point of a specimen to generate emerging secondary electrons that proceed to a detector after traversing an electrical extraction field. The extraction field is provided between electrodes arranged in a plane perpendicular to the optical axis of the electron beam device and a magnetic field is provided perpendicular to the electrical extraction field to compensate for the forces of the extraction field exerted on the primary beam yet to promote extraction of the secondary electrons. |
申请公布号 |
JPS62168324(A) |
申请公布日期 |
1987.07.24 |
申请号 |
JP19860212519 |
申请日期 |
1986.09.09 |
申请人 |
SIEMENS AG |
发明人 |
HARARUTO ROOZE;YOAHIMU TSUATSUHA;BURUKUHARUTO RISHIYUKE |
分类号 |
G01N23/203;G01T1/28;H01J37/153;H01J37/244 |
主分类号 |
G01N23/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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