发明名称 DETECTOR OF SECONDARY OR BACKWARD SCATTERED ELECTRONS IN ELECTRONIC APPARATUS
摘要 An electron beam apparatus has a primary beam directed onto a point of a specimen to generate emerging secondary electrons that proceed to a detector after traversing an electrical extraction field. The extraction field is provided between electrodes arranged in a plane perpendicular to the optical axis of the electron beam device and a magnetic field is provided perpendicular to the electrical extraction field to compensate for the forces of the extraction field exerted on the primary beam yet to promote extraction of the secondary electrons.
申请公布号 JPS62168324(A) 申请公布日期 1987.07.24
申请号 JP19860212519 申请日期 1986.09.09
申请人 SIEMENS AG 发明人 HARARUTO ROOZE;YOAHIMU TSUATSUHA;BURUKUHARUTO RISHIYUKE
分类号 G01N23/203;G01T1/28;H01J37/153;H01J37/244 主分类号 G01N23/203
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