发明名称 HYBRID TYPE MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To facilitate the transfer of bubbles by providing an element tapered from the initial pattern of 'Permalloy(R)' transfer path toward the connection part in the connection part from an ion implantation transfer path to the 'Permalloy(R)' transfer path and connecting the near tip of the tapered chip to the ion implantation transfer path. CONSTITUTION:The initial 'Permalloy(R)' pattern 13 of the 'Permalloy(R)' transfer path 12 has an element chip 13a tapered toward the connection part and connected to the ion implantation transfer path 11 nearly at the tip of the tapered element chip. The tapered angle theta of the chip 13a is preferably 0-90 deg.. Thus, the thinner part of the tapered chip 13a of the pattern 13 is susceptible to collect magnetic charge generated by a drive magnetic field to draw the bubble 14 from the ion implantation transfer path 11 to the 'Permalloy(R)' pattern easily.
申请公布号 JPS62167697(A) 申请公布日期 1987.07.24
申请号 JP19860007951 申请日期 1986.01.20
申请人 FUJITSU LTD 发明人 FURUKAWA KUNIAKI
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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