| 摘要 |
PURPOSE:To improve a margin at a connection part by providing a strip-shaped 'Permalloy(R)' pattern passing bubbles through the boundary dividing an ion implantation region and a non-ion implantation region existing at the connection part connecting an ion implantation transfer line and a 'Permalloy(R)' transfer line. CONSTITUTION:A strip shaped 'Permalloy(R)' pattern 15 is provided on a bound ary dividing the ion implantation region 10 and the non-ion implantation region existing at the connection part between the ion implantation transfer line 13 and the 'Pemalloy(R)' transfer line 14. An end 15a of the strip-shaped 'Permal loy(R)' pattern 15 where the bubbles pass covers the boundary 12 and is arranged on nearly boundary 12 at the center of the width. The level of the strip-shaped pattern relates to the length (l) and the strip-shaped pattern width is denoted by 1mum, the bubble diameter is denoted by 0.92mu, then the length (l) of the strip-shaped pattern is expressed as l>=10mum (nearly 11 times of bubble diameter or over). Thus, the barrier passing of the bubbles is facilitated by the strip- shaped pattern and the margin is improved.
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