| 摘要 |
PURPOSE:To grow a semiconductor thin film consisting of an accurate single atomic layer by presetting both the temp. of the first region introducing organic compd. of group III elements and the temp. of the second region introducing group V elements separately and properly and transferring a base plate alternately to both regions. CONSTITUTION:The region I of the inside of a reaction vessel 1 is held at low temp. capable of adsorbing a molecule of organic compd. of group III elements and a region II is held at high temp. wherein reaction between the raw materials of group III and group V is advanced. A base plate 2 is set in the region I and organic compd. of group III element fed through a gas introduction port 5 is adsorbed on the surface of the base plate 2. The base plate 2 is transferred to the region II and a semiconductor thin film of the compds. is grown thereon by allowing V group elements (compds.) fed through a gas introduction port 6 to react with group III elements. Thereafter the base plate 2 is transferred to the region I. The thin film of GaAs of the like consisting of an accurate single atomic layer is grown in a required thickness in one reciprocation by repeating this motion. The control precision of the film thickness of a grown layer can be improved by this method.
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