| 摘要 |
PURPOSE:To improve the reproducibility by forming a plurality of reactive regions sequentially containing different densities of doping gas including an impurity, passing regions through a substrate to form an amorphous semiconductor layer of a graded structure to readily and accurately control the doping amount of an impurity of the semiconductor layer. CONSTITUTION:When a P-type layer of an amorphous semiconductor layer is formed with boron (B) as an impurity, the densities of doping gas of B2H6 including B in reactive regions 6a-6c are prepared and set so that the doping ratios of B become, for example, 0.5, 0.4, 0.3% in the regions 6a-6c, a high frequency of a power source 3 is applied between the electrodes 2 and 4 to generate a discharge, and a plasma of the reaction gas is generated in the regions 6a-6c. Then, a substrate 7 in which a transparent conductive film made of an ITO is laminated is moved to the first region 6a to form a P-type layer in which the doping ratio of B is gradually varied from the transparent conductive film side from 0.5 to 0.3%. |
