| 摘要 |
PURPOSE:To readily obtain a distance between a low density impurity diffused layer and a high density impurity diffused layer necessary for an LDD structure with good reproducibility by ion implantation of an impurity through a thin film to form the high density diffused layer of an MIS type field effect transistor. CONSTITUTION:An element separating region 101 of a thick silicon oxide film is formed on a P-type silicon single crystal substrate 100, a gate oxide film 102 and a gate electrode 103 of polysilicon are formed on the element region, phosphorus ions are then implanted, a low density N-type impurity diffused layer 104 is obtained by heat treating, and a silicon oxide film 105 is then deposited by vapor growing method. Then, when phosphorus ions 106 are implanted, and heat treated, a high density N-type impurity diffused layer 107 is obtained. Then, an interlayer insulating film 108 is formed, aluminum wirings 109 of source, drain are formed through the contact hole of the film 108 to obtain an MIS type field effect transistor.
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