发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce the area of a chip by widening the areas of wiring regions from both ends toward the center to vary the area of each wiring region so that the wiring densities of the regions become substantially equal. CONSTITUTION:In a semiconductor device of a gate array structure having a plurality of transistor regions 2, and wiring regions 3 provided between the transistor regions for wiring between the transistors of the transistor regions, the width of the regions 3 near the center of a chip 1 is (c), which is larger than the width (b) of the wiring regions 3 of the periphery. Thus, since the wiring regions near the center having many wirings is widely formed, the wirings can be executed with margin. Accordingly, the wirings can be ready, and since the wiring regions of the periphery having less wirings are reduced in the area correspondingly, the area of the entire chip can be reduced.
申请公布号 JPS62166544(A) 申请公布日期 1987.07.23
申请号 JP19860009513 申请日期 1986.01.20
申请人 FUJITSU LTD 发明人 TAKAYAMA YOSHIHISA;TANAKA KAZUMI
分类号 H01L21/822;H01L21/3205;H01L21/82;H01L23/52;H01L27/04;H01L27/118 主分类号 H01L21/822
代理机构 代理人
主权项
地址