发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To eliminate an improper opening, an improper loose contact which occur due to bonding and protuberance of glass by forming the protuberance by a screen printing method with Ag paste on a deposited electrode metal to completely contact leads with the top of the highest Ag paste. CONSTITUTION:A mesa groove of a predetermined depth is formed on a diffused Si wafer, a glass is bonded into the mesa groove by an electrophoretic method, baked and fused. In this case, the glass is actually bonded to the broken portion or pinhole of an SiO2 film, protruded on the wafer, and the glass is protruded on the surface of the wafer due to the influence of an electric field concentration in a pellet at the periphery of the wafer. An electrode pattern is formed by depositing on the wafer, and a metal layer for an electrode is also deposited on the back surface. Then, the electrode of Ag paste is printed on the deposited film electrode by a so-called seam screen printing method. Then, the wafer is baked, and fused with the base deposited film by baking. The wafer is separated into individual pellets, and a DHD structure is assembled.
申请公布号 JPS62166549(A) 申请公布日期 1987.07.23
申请号 JP19860010401 申请日期 1986.01.20
申请人 NEC CORP 发明人 IKEDA KAZUKO
分类号 H01L21/283;H01L21/288;H01L21/321;H01L21/60 主分类号 H01L21/283
代理机构 代理人
主权项
地址