| 摘要 |
PURPOSE:To eliminate the contact of a source region and a drain region by heat treatment by ion implantation to form the source region and the drain region with a sidewall on the side of a gate electrode as a mask to form an impurity density region. CONSTITUTION:When ions are implanted with a gate electrode 3 formed on a one conductivity type gallium arsenide layer 2 as a mask to form a source region 5 and a drain region 6, a sidewall 91 is selectively formed on the side of the electrode 3, ions are implanted to form the source region 5 and the drain region 6 with the sidewall 91 as a mask to form impurity density regions 51, 61 between the layer 2 of the lower portion of the electrode 3 and the regions 5, 6. Thus, the regions 5, 6 are not contacted by heat treatment in the step of forming the regions 5, 6 to prevent a short channel effect from occurring.
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