| 摘要 |
PURPOSE:To attain the temp. change of a base plate for a short time by heating the base plate provided to the inside of a reaction tube with a heating means of the outside and performing the cooling of the base plate by a cooling gas introduction pipe inserted from the outside. CONSTITUTION:The introduction pipe 4 of gas for cooling is introduced into the inside of a reaction tube 3 from the outside and the supporting rods 5 are fixed to the end part of a discharge port of the introduction pipe 4. A pedestal 6 of a base plate is fixed on the supporting rods 5. A lamp 10 for heating is provided to the window 9 side of the reaction tube 3 to heat the base plate 7. When the base plate 7 is heated, a shutter 11 is closed and gaseous hydrogen or the like cooled by a cooling device 8 is introduced to the rear side of the pedestal 6 through the introduction pipe 4 and the base plate 7 is descended in temp. The time necessitated for temp. change of the base plate 7 is made short by this mechanism and the vapor growth having a high-quality compound semiconductor. can be performed.
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