摘要 |
PURPOSE:To suppress evaporation of mercury and to grow single crystal less in composition deviation by covering a raw material melt for growth with a chloride eutectic material having low m.p. and low specific gravity. CONSTITUTION:In a sliding board type liquid phase epitaxial growing device, a raw material melt 5 having small particulate mercury telluride, cadmium telluride and tellurium as a composition is housed in a housing part 4 of the raw material melt. A chloride eutectic material 6 is mounted thereon to cover it and provided to the inside of an electric furnace and crystal growth is performed at the prescribed temp. in the prescribed atmosphere. As the chloride eutectic material, the following composition consisting of lead chloride and rubidium chloride is used which are combined so that m.p. is lower than the melt 5 and specific gravity is made small. By this method, evaporation of mercury is made less and single crystal of mercury cadmium telluride having the aimed composition is obtained.
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