| 摘要 |
PURPOSE:To suppress the transient direct current of a buffer which requires a large driving radio wave so as to reduce the power consumption of the buffer, by preventing the P and N transistors of the 1st and 2nd CMOS buffers from being turned on simultaneously. CONSTITUTION:The threshold E5 of the input gate 6 of the 2nd NAND gate NA2 is set at a sufficiently high value, whereas the threshold E7 of one input gate 7 of the 1st NOR gate NO1 is set at a sufficiently low value. Moreover, when the output voltage (voltage of the input gate 7) of the 2nd NOR gate NO2 rises to 1V, namely, to the threshold EN of an N transistor QN, the N transistor QN is turned on. In other words, during the period from the moment when the voltage of a node n2 reaches 4V to a moment when the voltage of another node n3 reaches 1V both P and N transistors QP and QN are turned off. Therefore, both the P and N transistors of a CMOS buffer are never turned on simultaneously.
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