| 摘要 |
PURPOSE:To maintain the reliability of the manufacturing process by confirmation of the result of quality judgement at the time of characteristic inspection on the basis of signs by a method wherein signs indicating the apearance of semiconductor elements are marked on the surface of the semiconductor element. CONSTITUTION:An InPn single crystal ingot 1 is sliced into a wafer 2 to be processed, the wafer 2 being severed and contained in a liquid epitaxial device, and rectangular wafers 4 being then produced. Next, each wafer 4 is subjected to growing treatment and treatments such as partial diffusion and electrode formation, resulting in the formation of a plurality of semiconductor element regions 5 in n colums and m lines. At this time, an address 6 consisting of the colum number 7 and the line number 8 of the wafer 4 is marked in each region 5. Then, a semiconductor laser element 9 is formed by separation of the wafer 4 at the boundary of the regions 5 so that the end surface of a resonator may become a mirror surface. The result of quality judgement at the time of characteristic inspection is confirmed on the basis of the address 6, and accordingly the reliability of the manufacturing process for the semiconductor device is maintained. |
