| 摘要 |
PURPOSE:To form a smoothly oblique contact hole at the upper edge of the hole of an insulating film by covering the insulating film with a shape control film for controlling the shape of the contact hole, then subjecting it to isotropical dry etching and anisotropical dry etching with a resist as a mask. CONSTITUTION:An SIG film 5 is etched by isotropically etching in a thicknesswise direction, laterally sidewisely etched simultaneously from the lower end of the hole 6 of a resist 3, and subsequently isotropically dry etched. The film 5 is etched while a PSG film 2 is being etched, and the hole is formed in the smoothly oblique surface by the sidewisely etching of the film 2. Then, with the resist 3 as a mask anisotropically etched at the remaining portion of the film 2 by RIE to form a hole. According to the RIE, the shape of the etching is substantially similar by projecting the shape of the hole 6 of the resist 3. Then, after the resist 3 and the film 5 are removed, a wiring pattern is covered. At this time the slope of the upper edge of the hole 6 of the film 2 becomes smooth.
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