| 摘要 |
PURPOSE:To enable efficient mass production by forming an electric charge implantation blocking layer in a manner to be alternately laminated plural times with at least tow kinds of constituting atoms in the form of ultrathin films. CONSTITUTION:The electric charge implantation blocking layer 102 is the layer having the ultrathin film lamination structure laminated plural times with at least >=2 kinds of the ultrathin films of the constituting atoms at least part of which are different. More specifically, said layer is formed by alternately laminating plural times the ultrathin film layer constituted of Non-Si(H, X) contg. a p-type impurity or n-type impurity having an electric charge implantation blocking effect and the ultrathin film layer constituted of Non-SiM(H, X) contg. at least 1 kind selected from an oxygen atom, carbon atom and nitrogen atom having the adhesive effect to a base. |
