| 摘要 |
PURPOSE:To obtain a device ashing and removing a film adhered onto a wafer at high speed by mounting a gas outflow section containing O3, separated at a set interval from the wafer on a rotatable base, boring an opening to the outflow section and uniformly supplying a gas onto the wafer. CONSTITUTION:A gas outflow section 22 is fitted separated at a set interval from a wafer 28 on a rotatably supported base 21, a porous substance section is set up to a surface oppositely faced to the wafer, and a gas is flowed out from a large number of holes. A cooler is mounted to the outflow section 22. O2 is supplied and O3 is generated and a flow rate is controlled, O3+O2 are cooled at 15-50 deg.C, the gas is fed uniformly onto the rotating wafer temperature- controlled 6 at 150-500 deg.C, and a reaction product gas is discharged 4. A rotating carriage or the outflow section can be moved vertically. According to the device, a film applied onto the wafer is exposed efficiently to O radicals conducting an extremely strong oxidative effect, and can be ashed and treated at a high speed.
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