| 摘要 |
PURPOSE:To reduce a threshold value current of a semiconductor light emitting device by laminating an active layer to become a III-V Group mixed crystal light emitting region including In and an InP crystal layer or a mixed crystal layer including In and P, etching to form a stripelike inverted mesa shape, and then shaping the side with mixture solution of HBr, H2O2, H2O. CONSTITUTION:An N-type In buffer layer 2, an InGaAsP active layer 3, a P-type InP clad layer 4 and a P-type InGaAsP cap layer 12 are laminated and liquid epitaxially grown on an N-type InP substrate 1, covered with a mask 11, and etched with brome methanol to expose the side of the layer 3 to form a light emitting unit 5. Since the side is (111)A face, the mask 11 remains as it is, the lower portion of the unit 5 is slightly etched with a mixture solution of HBr, H2O2 and H2O to varnish the (111)A surface to form a substantially perpendicular light emitting unit 5b, thereby completing a light emitting unit. Then, current blocking layers 6, 7, an insulating layer 8, and electrodes 9, 10 are formed and cleaved in an ordinary manner. |
