FORMATION OF RESIST PATTERN

摘要

PURPOSE:To form a resist pattern with a simple stage by coating an intermediate layer which prevents property deterioration between an upper layer resist and lower layer resist and can be developed together with the upper layer resist in the lower layer resist. CONSTITUTION:A PMMA which is a deep UV resist is coated as the lower layer resist 2 on a substrate 1 and the intermediate layer 11 which prevents the property deterioration between the upper layer resist 3 and the lower layer resist 2 and can be developed together with the upper layer resist 3 is coated thereon. A UV resist which is the upper layer resist 3 is then coated. AUV resist which is the upper layer resist 3 is exposed and developed, by which said resist is patterned. The intermediate layer 11 is also stripped at the same instant. The lower layer resist 2 is then exposed with the upper layer resist 3 as a mask. The upper layer resist 3 is removed and at the same time, the intermediate layer 11 is removed as well; finally the lower layer resist 2 is etched.