发明名称 TREATMENT METHOD
摘要 PURPOSE:To improve wettability with a treating liquid of the whole material to be treated, and to prevent the nonuniformity of treatment by exposing the material to be treated in a liquefied or gassy substance having compatibility with the treating liquid prior to the treatment of the material to be treated. CONSTITUTION:A wafer type treating liquid is used for etching and rinsing an Si substrate, the surface thereof has fine irregularities. A substance, which has small adsorptivity to Si, is easy to be replaced with the water type treating system and has a hydrophilic group and a hydrophobic group in a molecule thereof, methanol acetic acid, acetone, etc., their mixture and a mixture with water are employed as a liquid or a gas having compatibility with the water group treating liquid. When the Si substrate is dipped or brought into contact to the liquid, the hydrophilic groups and hydrophobic groups selectively deposit on the surface, and the Si substrate is easy to be wetted by hydrophilic and hydrophobic treating liquids as a whole. Since a deposit has compatibility with the water group treating liquid and is dissolved during treatment and has small surface tension, bubbles are easy to be desorbed, and the Si substrate can be treated uniformly. Lastly, the adhering treating liquid is washed away by a pure water.
申请公布号 JPS62165937(A) 申请公布日期 1987.07.22
申请号 JP19860008209 申请日期 1986.01.17
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MAEDA YORIHISA;SUZUKI TAKASHI;YAMAMOTO SHIGEYUKI
分类号 H01L21/306;G03F7/00;G11B7/26;H01L21/027;H01L21/30;H01L21/304 主分类号 H01L21/306
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