| 摘要 |
PURPOSE:To ash and remove a film adhered on the surface of a wafer by forming a drift space for a gas containing O3, brought into contact with the wafer and keeping a temperature on the outflow of the gas at 15-50 deg.C. CONSTITUTION:A gas outflow section 22 is shaped oppositely facing to each other at a set interval to a wafer 28, and a gas is cooled by a cooler. O2 is fed and O3 is generated and a flow rate is controlled, and O3+O2 are cooled at 15-50 deg.C and fed continuously onto the wafer 28 controlled 6 at 150-500 deg.C. A reaction product gas generated is moved and discharged 4 from the surface of the wafer. One of the wafer and the gas outflow section 22 can be elevated by a device 5. Accordingly, the surface of an organic film on the wafer is exposed effectively to O radicals having an extremely strong oxidative effect, and can be ashed and treated at a high speed.
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