| 摘要 |
PURPOSE:To concentrate a current only in an active layer on a V-shaped groove by forming a stripelike V-shaped groove from the surface of an internal current narrowing layer formed on a P-type InP substrate to the substrate, increasing the thickness of an active layer formed thereon on the groove and forming a corrugation layer for selecting a wave thereon. CONSTITUTION:An N-type InP layer 33 and a P-type InP layer 35 are laminated and grown as internal current narrowing layers on a P-type InP substrate 31 having a (100) face, an a groove 37 of V-shaped section is formed in (0, 1, -1) direction from the layer 35 to the surface of the substrate 31. Then, a P-type InP clad layer 39 is grown on the entire surface while burying the groove, and an InGaAsP active layer 41 is thickly grown on the groove 37, a waveshape forming layer 43 for selecting a wavelength becoming a corrugation layer on the surface and an N-type InGaAsP cap layer 45 are laminated and deposited thereon. Thus, a current flowing to the layer 41 is concentrated only on the groove 37 to obtain a single mode oscillation element with a low current. |
