发明名称 Method for forming deposited film.
摘要 <p>A method for forming a deposited film by introducing the active species (A) formed by decomposition of a subjective starting material gas (A) which is the major flow rate component and the active species (B) formed by decomposition of an objective starting material gas (B) which is the minor flow rate component and the activated species (C) formed from a compound (C) separately from each other into a film forming space for formation of a deposited film on a substrate and permitting said active species (A) and active species (B) to chemically react with said activated species (C) to thereby form a deposited film on the substrate comprises forming a multi-layer structure film by varying the amount of said active species (B) introduced into the film forming space. </p>
申请公布号 EP0229707(A2) 申请公布日期 1987.07.22
申请号 EP19870300222 申请日期 1987.01.12
申请人 CANON KABUSHIKI KAISHA 发明人 ISHIHARA, SHUNICHI;HIROOKA, MASAAKI;HANNA, JUN-ICHI;SHIMIZU, ISAMU
分类号 H01L31/04;C23C16/02;C23C16/452;H01L21/205;(IPC1-7):C23C16/44 主分类号 H01L31/04
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