发明名称 Planarization of a layer of metal and anodic aluminum
摘要 A planarization method of fabricating a layer of metal conductors embedded in a dielectric level. A coating of aluminum is anodized from the top but leaving a thickness of unanodized aluminum on the bottom. The top is masked and etched to provide a predetermined bare area which is etched out down to the unanodized aluminum. A metal is plated to the unanodized aluminum equal to the thickness of the unexposed anodic aluminum. The mask is removed and the unanodized aluminum is anodized. Therefore, the layer of metal and the dielectric anodic aluminum are planarized. Another anodizable metal may be used as an undercoat layer for completing the anodizing of the aluminum.
申请公布号 US4681666(A) 申请公布日期 1987.07.21
申请号 US19860930167 申请日期 1986.11.13
申请人 MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION 发明人 POTTER, CURTIS N.;KROGER, HARRY
分类号 C25D11/04;H01L21/316;H01L21/768;(IPC1-7):C25D5/02 主分类号 C25D11/04
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