| 摘要 |
PURPOSE:To form a multilayered element easily improving the characteristics of a semiconductor element while reducing the proportion defective and simplyfying the titled device by a method wherein deposit film forming chambers, an etching chamber and a conductive film forming chamber are connected to one another while multiple groups of deposit film forming chambers are provided. CONSTITUTION:A substrate body 507 of SUS rolled out of a feeding roller 501 is firstly roughened in an etching chamber 506a and then deposit films of semiconductor and compound semiconductor impurity-controlled in semiconductor film forming chambers 506c-h are laminated; photoelectric conversion layers are cut off to be separated in an etching chamber 506i; and electrode is partially deposited in a conductive film forming chamber 506j to complete and element. Another conductive film forming chamber 506b can be used as necessary to deposit substrate body side electrode of element when the substrate 507 is made of an insulator. Respective semiconductor films of n, i, p type can be formed evenly extending over wide range in respective depositing spaces 506c-h. At this time, gaseous halogen base oxidizer is led in from gas leading-in tubes 502c-h while gaseous raw material for forming deposit film is led in from the other gas leading-in tubes 503d-f. |
