| 摘要 |
PURPOSE:To improve the reliability of a semiconductor integrated circuit device by providing a semiconductor region for a guard of the same structure as a substrate lifting port on the periphery of an element to which a substrate current might flow to prevent the semiconductor integrated circuit made of a Bi-CMOS circuit from latching up. CONSTITUTION:An input terminal 1 is connected with the P<+> type semiconductor region 18 of a diode forming region D1, and a power source voltage terminal VCC is connected with an N<+> type semiconductor region 20a. A power source voltage terminal VEE is connected with the P<+> type semiconductor region 19 of a diode forming region D2, and the input terminal 1 is connected with an N<+> type semiconductor region 20b. A guard region 2 of the same structure as a substrate lifting port for applying a potential to the substrate is formed on the peripheral surfaces of the regions D1, D2. That is, the region 2 is formed in a laminated structure of a P-type isolation region 13 contacted with a semiconductor substrate 11, a P-type semiconductor region 15 formed simultaneously with a C-MOS P-type well 15, and the semiconductor region 19 formed simultaneously with a P<+> type diffused layer 19. |
