| 摘要 |
PURPOSE:To develop a Cu-alloy lead material excellent in press blanking workability, heat resistance, characteristic of heat radiation, electric conductivity, and strength, by using, as a lead material for semiconductor device, a Cu alloy containing specific amounts of Fe, Sn, Mg, and Ca. CONSTITUTION:As the lead material for semiconductor device such as IC, LSI, etc., a bar product composed of Cu alloy stock containing 0.1-1.5% Fe. 0.5-2.5% Sn, 0.004-0.1% P, and 0.002-0.2% Mg and/or Ca is used. In this way, Cu-alloy lead materials reduced in wear of press blanking die tools and having >350 deg.C softening point (as evaluation of heat resistance), >13% IACS electric conductivity, >50kg/mm<2> tensile strength, and >4% elongation can be obtained.
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