发明名称 |
Preferential chemical etch for doped silicon |
摘要 |
The present invention provides an improved etchant composition and method for the resistivity specific etching of doped silicon films which overlie intrinsic or lightly doped crystal regions. The composition of the etchant is 0.2-6 mole % hydrofluoric acid, 14-28 mole % nitric acid, and 66-86 mole % acetic acid/water. The etchant leaves no silicon residue and provides for controlled etching with an etch stop at the lightly doped or intrinsic region.
|
申请公布号 |
US4681657(A) |
申请公布日期 |
1987.07.21 |
申请号 |
US19850793402 |
申请日期 |
1985.10.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HWANG, BAO-TAI;ORR-ARIENZO, WENDY A.;GLANG, REINHARD |
分类号 |
H01L21/306;H01L21/308;(IPC1-7):H01L21/306;B44C1/22;C03C15/00;C23F1/02 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|