| 摘要 |
PURPOSE:To obtain a semiconductor laser with a low threshold current by providing impurity introduced regions which suppress a leakage current. CONSTITUTION:First, a p-type cladding layer 2, an active layer 3, an n-type cladding layer 4 and an n-type cap layer 5 are formed on a p-type GaAs substrate 1 by crystal growth. After a crystal growth, a mesa stripe 6 is formed by photoetching and then Zn diffused regions 10 are formed by selective diffusion. Then an SiO2 film 7 is formed and the SiO2 film on the mesa stripe 6 is removed by photoetching and, after that, an n-type electrode 8 and a p-type electrode 9 are formed to complete the process. Then a pellet is cut out by cleaving and mounted on a heat sink and lead wires are attached. The active layer 3 beneath the mesa stripe 6 functions as a main light emitting region. As the SiO2 film 7 is formed on the part other than the mesa stripe 6, a current is concentrated to the mesa stripe 6. The current injected from the mesa stripe 6 tends to spread to the horizontal direction in the n-type cladding layer 4 but, as the Zn diffused regions 10 are provided, a leakage current which flows horizontally over the regions 10 hardly exists.
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