发明名称 Self-refresh control circuit for dynamic semiconductor memory device
摘要 A self-refresh control circuit for a dynamic memory device having memory cells and a self-refresh circuit on a single chip. The circuit includes a leak current monitor circuit representing the leakage of a memory cell and an inverter circuit for detecting the leakage of the monitor circuit so as to control the refresh operation automatically.
申请公布号 US4682306(A) 申请公布日期 1987.07.21
申请号 US19850767602 申请日期 1985.08.20
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SAKURAI, TAKAYASU;IIZUKA, TETSUYA
分类号 G11C11/406;(IPC1-7):G11C7/00 主分类号 G11C11/406
代理机构 代理人
主权项
地址