| 摘要 |
PURPOSE:To prevent reliability from reduction, to augment microstructural features, and to facilitate the manufacturing process by a method wherein a metal wiring is buried in a window provided in an insulating film positioned on a main surface of a semiconductor substrate and the bottom and sides of the metal wiring is covered by a continuous layer of a different metal. CONSTITUTION:A silicon oxide film 3 is grown on a main surface of a semiconductor substrate 1 wherein a shallow-junction diffusion layer 2 has between formed, and a microstructural window 3a is provided in the silicon oxide film 3 at a location corresponding to the diffusion layer 2. a relatively thick silicon nitride film 4 is then grown thereon. A process follows wherein the silicon nitride film 4 is subjected to selective etching for the formation of a larger window 4a in the region including the microstructural window 3a. The entire surface is coated with a thin titanium.tungsten alloy layer 5, whereto an aluminum layer 6 is attached. A photoresist 7 and the aluminum layer 6 are etched back until the aluminum layer 6 positioned over the silicon nitride film 4 is completed eliminated, after which the aluminum layer 6 is retained only in the microstructural and larger windows 3a and 4a. Further, exposed portions of the titanium.tungsten alloy layer 5 is subjected to plasma etching in CF4 gas.
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