发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve an insulating film in its capability to withstand a thermal shock and thereby enhance semiconductor device reliability by a method wherein it is so arranged, at a position in a plane layout where a pad electrode and lower-layer wiring overlap with each other parallelly, a side may be located at least 5mum from the other in the direction rectangular to the sides for the alleviation of inclination of an interlayer insulating film or protecting insulating film at the position of staking. CONSTITUTION:At a position where a side of a lower-layer wiring 3 is arranged paral lel with a side of a junction section 5a of a pad electrode 5, it is so arranged that the upper side will not coincide with the lower side but that one will be away from the other in the direction rectangular to the length of the sides of in the direction of width. For the sides of the lower-layer wiring 3 and junction section 5a to be away from each other, the width of the junction section 5a will be larger than that of the lower-layer wiring 3, so that the junction section 5a positioned over the lower-layer wiring 3 will be larger than the lower-layer wiring 3. A quantity (a) representing the separation width-wise between the sides of the junction section 5a and lower-layer wing 3, through dependent upon the thickness of an upper-layer wiring 5, lower-layer wiring 3, interlayer insulating film 4, and protecting insulating film 6, will be sufficient when it is in the vicinity of 5mum. A larger value, however, is preferred.
申请公布号 JPS62165344(A) 申请公布日期 1987.07.21
申请号 JP19860006228 申请日期 1986.01.17
申请人 NEC CORP 发明人 OZAWA MASAHIDE
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L23/48 主分类号 H01L23/52
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