| 摘要 |
PURPOSE:To make it feasible to control a fine thickness of a growing film and cut down the manhours while improving the stability of molecular beam intensity and shortening the time from the start of the heating of the material to a possible start of the growth by a method wherein the intensity of molecular beam is adjusted to have a specified value while heating the material by means of a heat-ray lamp device. CONSTITUTION:Molecular beam source cells 4 are provided with conventional heaters 42 of less capacity to be arranged on an opening side only of a crucible 21. Besides, a heat ray lamp device 5 composed of a heat ray lamp 51 comprising a tungsten halogen lamp of 1kW as well as a reflecting mirror 52 focussing the heat rays from the lamp 51 on the surface Ma of material M of the crucible 21 are arranged for each of multiple cells 4. In such a constitution, the device 5 is used to form a grown film of, e.g., Al x Ga1-xAs, major heating of Al and Ga performed by means of the heat ray lamps 5, intensity adjustment of molecular beam B by the heaters 42 and heating As as well as intensity adjustment of molecular beam B by the heater 42 only.
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