| 摘要 |
PURPOSE:To improve the reliability of a semiconductor integrated circuit device by using a nitride oxide film for the dielectric film of a capacity element of a memory cell to increase the insulation of the dielectric film and to increase the permittivity larger than a silicon oxide film. CONSTITUTION:A dielectric film 7 is formed by laminating from belong a silicon oxide film 7A, a silicon nitride oxide film 7B and a silicon oxide film 7C on a semiconductor substrate 1. The film 7B is formed by depositing, for example, by a plasma CVD, and not only the upper surface of the film 7A on the substrate but also the upper surface of a field insulating film 2 mainly between capacity elements of a memory cell array are covered with the film 7B. The film 7B has a permittivity larger than the films 7A, 7B, less unbonded lattice (dangling bond), incoincidence between lattices and lattice defects than the silicon nitride film, more hardly trapped carrier electrons and more hardly hopping current than the silicon nitride. Thus, the film 7B has higher insulation than the silicon nitride film. |
