| 摘要 |
PURPOSE:To improve the film characteristics while reducing the defective ratio and simplifying the titled device by a method wherein deposit film forming chambers, an etching chamber and a conductive film forming chamber are provided in connection with one another. CONSTITUTION:A substrate body 507 of heater 505 rolled out of a feeding roller 501 is rougheded in an etching space 506a and then passing through resepective semiconductor film forming chambers 506b, 506c, 506d for depositing respective layers n, i, p further another chamber 506e for partial etching process and the other chamber 506f for partially forming conductive film to be patterned and then rolled up in a rolling up roller 508. Respective depositing spaces 506b, 506c, 506d form respective semiconductor films evenly in the wide range. At this time, gaseous halogen base oxidizer is led in from gas leading-in tubes 502b, 502c, 502d while gaseous raw material for forming deposit film is led in from the other gas leading-in tubes 503a, 503b, 503c. In such a constitution, heaters 505b, 505c, 505d are provided behind the substrate body 507 opposing to the leading-in tubes to heat the substrate body 507. |
