| 摘要 |
PURPOSE:To enable the heat treatment to be performed without fail while preventing the members to be heat treated from being oxidized by a method wherein, after inserting the members to be heat treated into a furnace core tube of an electric furnace, and opening of the furnace core tube is covered to heat treat the members as they are. CONSTITUTION:Semiconductor wafers 5 containing high melting point metallic silicide as members to be heat treated are loaded upon a boat loader 4 to be inserted into a furnace core tube 1 from the other end opening using a pull out bar 6. The semiconductor wafers 5 are once held at the part near the opening at low temperature immediately covering the opening with a cover 7 at this temperature to prevent air from running into the furnace core tube 1. On the other hand, inert gas or nitrogen gas is led in the furnace core tube 1 from a gas leading-in port 2 and after filling the furnace core tube 1 with said gas to purge the oxygen in the furnace core tube 1, the semiconductor wafers 5 are shifted to the central part of furnace core tube 1 at high temperature to be heat treated as specified. At this time, hydrogen is added to the led in gas so that any residual oxygen in the furnace core tube 1 may be reacted to hydrogen to be extinguished never oxidizing the semiconductor wafers 5.
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