| 摘要 |
PURPOSE:To form a uniform and good metallic film easily in a desired region on a substrate without using a mask by ejecting a gaseous raw material containing a transition metal for forming a metallic film and a gaseous halogen group oxidant to a desired section on a substrate by employing a gas ejection section capable of relatively moving to the substrate. CONSTITUTION:A cylinder 101 is heated at 300 deg.C by a heater 128 and MoCl5 filled into the cylinder 101 is vaporized while MoCl5 is fed into a transport tube 6 from a gas introducing tube 8, heating the gas introducing tube 8 by a heater 130. F2 gas filled to a cylinder 103 and He gas filled to a cylinder 104 are fed simultaneously into the transport tube 6 from a gas introducing tube 7. The ON-OFF action of a solenoid valve 9 is controlled properly, and the transport tube 6 is scanned at relative speed of 0.1mm/sec to a substrate 5. Accordingly, a semiconductor device in which Mo films 11 in uniform film thickness is deposited and formed intermittently on the substrate 5 is acquired. The scanning speed of the transport tube 6 is controlled, thus forming the films 11 by adequately changing the thickness of a pattern. |
