| 摘要 |
PURPOSE:To decrease damages on a GaAs substrate and enable a heat-resisting gage electrode film to be formed so that superior shottky characteristics can be obtained without problems on peeling, by piling the first electrode film by vacuum evaporation method on a compound semiconductor operational layer and successively piling the second electrode film by sputtering method on the first electrode film. CONSTITUTION:The first electrode film 11 is piled on a compound semiconductor operational layer 4 by vacuum evaporation method, and successively the second electrode film 12 is piled on the first electrode film 11 by sputtering method. For example, after 1000Angstrom W is piled on a GaAs substrate by the vacuum evaporation method, 4000Angstrom of W is similarly piled by the sputtering method. Use of the vacuum evaporation film as the first electrode film enables damage of the GaAs substrate to be reduced, and formation of the second electrode film by the sputtering method reduces stress of the first electrode film, not causing the problem on peeling as the conventional sputtering film, and a barrier of good quality can be formed.
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