| 摘要 |
PURPOSE:To improve characteristics of small forward voltage in a high-current region without enlarging diode capacity, by making concentration of a semiconductor substrate located between a shottky electrode and a contact one be of the same conduction type and higher than surface concentration of the shottky junction part. CONSTITUTION:The same conduction type of impurities are introduced inside from a surface part of the semiconductor substrate neighboring an insulator layer 2 covering the surface of the semiconductor substrate 1, to form a high concentration region 6. An ohmic electrode 7 and a shottky barrier electrode 8 are formed on a surface of a semiconductor substrate 1 neighboring and following the high concentration layer 6. For example, a silicon dioxide film 2 is formed on the surface of the n-type Si semiconductor substrate 1 and then an opening 3 is formed. After a silicon dioxide film 4 is formed on the opening 3, ion implantation of P is performed, besides with a silicon dioxide film 5 piled. Then, the high concentration region 6 is formed by thermal diffusion of P. A window 9 is formed on the other surface region of the silicon dioxide layer on the silicon semiconductor substrate 1 neighboring and following the high concentration region 6, and then a shottky junction opening is formed to pile Mo and Al here and on the window 9 and form the electrodes 7 and 8. |
