| 摘要 |
PURPOSE:To realize high integrity of a semiconductor device, by partially forming an amorphous insulating film on a semiconductor substrate, and selectively performing epitaxial growth at semiconductor substrate-exposed parts, and then forming electrodes or electrode-drawing parts on the then generated facet planes. CONSTITUTION:An amorphous insulating film 16 is partially formed on a semiconductor substrate 1 and epitaxial growth is selectively performed at semiconductor substrate 1-exposed parts, and then electrodes or electrode drawing parts for a semiconductor device are formed on the then generated facet 12 planes. For example, after a n well 7, a source.drain region 3 in a p-channel MOS transistor, and a source.drain region 2 in a n-channel MOS transistor are formed on a (100) plane of a P-type Si substrate 1, element-isolation patterns by an amorphous insulating film 16 of SiO2 or the like are formed. Then, selective epitaxial growth is done to perform definite ion implantation in each of source.drain regions 8 and 6 and the regions 4 and 5. Then, a gate insulating film 14 is formed, and polycrystal silicon gate wiring 18 is formed on the facet 12, and then interlayer insulating films 9 are formed, to complete a complementary MOS transistor with the metallic wiring 10 done. |
