| 摘要 |
PURPOSE:To enable capacitors of small area and large capacity to be integrated in a semiconductor device, by forming structure in which junction capacity of a shottky barrier is inserted in parallel into an usual dielectric capacitor. CONSTITUTION:An element formation-purpose semiconductor layer 2 is formed on a semiconductor substrate 1, and an ohmic electrode 3 is formed on the semiconductor layer 2, and the whole surface of the substrate is covered with the first insulating layer 4, Then, opening parts 5 and 6 are formed on respectively the ohmic electrode 3 and the first insulating layer 4 situated on the semiconductor layer 2 in a region of shottky contact formation. Then, the opening parts 5 and 6 are covered to form respectively the first and second conductive layers 7 and 8 to electrically connect the first conductive layer 7 and the ohmic electrode 3. Then, the second insulating layer 9 is applied all over the substrate, and an opening part 10 is formed on the second insulating layer 9 situated on the first conductive layer 7. This opening part 10 is covered to form the third conductive layer 11, and the third conductive layer 11 and the first conductive layer 7 are electrically connected to become a one-sided electrode plate, with the second conductive layer 8 serving as the other-sided electrode plate, so that a capacitor is formed. |
