| 摘要 |
PURPOSE:To enable the easy automatic adjustment of sensitivity by changing a voltage to be applied to a transparent electrode with time in the structure in which an amorphous semiconductor layer is arranged on a signal read-out part made of an Si single crystal substrate. CONSTITUTION:On a P-type semiconductor substrate 1, an N<+> layer 2 as a signal charge transfer part of a CCD and an N<+> layer 5 connected with an amorphous semiconductor layer 3 through a metallic electrode 4 are formed. P<+> layers 6-1 and 6-2 are arranged adjacently to the layers 2 and 5. On the layer 3, a transparent electrode 7 is formed. THe signal charges photoelectrically converted in the layer 3 are transferred to the layer 2 and are read out by applying a voltage to a read-out gate electrode 8 adjacent to the layer 5. Also, the electrode 8 and a transfer electrode are surrounded with insulating films 10-1 and 10-2. In this constitution, a voltage to be applied to the electrode 7 is changed with time. Namely, a low-voltage duration after retaining a voltage at a predetermined voltage is changed according to the incident light quantity so as to perform the automatic adjustment of sensitivity.
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