| 摘要 |
PURPOSE:To reduce source resistance as well as to enhance the reliability of an element by a method wherein a groove, having the shape which is steep on the source side of the channel region of an active layer and gentle-shaped on the drain side, is formed on the active layer and a source electrode and a drain electrode are formed. CONSTITUTION:An Si nitride film 22 is formed on a Cr-doped GaAs semiinsulating semiconductor substrate 21, aperture parts 24 and 25 are formed thereon, and high density ion implanted layers 26 and 27 are formed by implanting Si. Then, an aperture part 29 is formed, Si is implanted, and a channel region 30 is formed. Then, the nitride film 22 is removed, and an Si nitride film 31 is newly formed. An ion milling is performed in vertical direction on the substrate 21, and a groove 34 which is steep on the source side and tapered on the drain side is formed on the region 30. Then, active layers 26, 27 and 30 are activated, and a heat treatment is performed. Subsequently, an aperture part 36 is formed; Pt, Ti and Au are vapor-deposited on a gate metal 37, and a gate electrode 38 is formed. Besides, a source electrode 43 and a drain electrode 44 are obtained using a gold-Ge alloy and Au. |
