| 摘要 |
PURPOSE:To form an ohmic contact electrode without generation of roughing on the surface of a substrate by a method wherein, after a Ti film has been formed on the surface of electrode formation of the substrate, an electrode is formed using an Au-Si alloy and an Au layer, and then the Ti film on the substrate other than in the electrode part is removed. CONSTITUTION:A wafer 4, wherein a P-N junction is formed successively by growing a P-type GaAs layer 2 and an N-type GaAlAs layer 3 on a P-type GaAs substrate 1 using a liquid phase growing method, is obtained. Then the contamination on the surface of the substrate is removed by performing an etching on the wafer 4 using the etchant consisting of sulfuric acid and hydrogen peroxide solution. Subsequently, a Ti layer 5 is formed on the surface of the etched layer 3 using a sputtering method. An electrode layer is formed with an Au-Si alloy layer 6 and an Au layer 7, then a photoresist 8 is applied on the surface of the electrode, and after a prebaking has been performed thereon, the prescribed pattern is exposed, a developing and a baking are performed, and the photoresist is patterned. Then, the Ti layer 5 exposed on the wafer 4 is removed, and the photoresist on the surface of the electrode is removed to form an ohmic contact.
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