| 摘要 |
PURPOSE:To make it possible to produce a compound semiconductor ingot having high hole mobility, by annealing an ingot of a compound semiconductor single crystal and cooling the ingot while controlling the cooling rate at a given value. CONSTITUTION:An ingot of a compound semiconductor single crystal, e.g. GaAs, etc., is annealed and cooled at <=100 deg.C/hr cooling rate to produce a compound semiconductor ingot. Such control of the cooling rate after annealing treatment eliminates crystal defects and greatly improves the hole mobility. Furthermore, the resistivity can be simultaneously improved if the compound semiconductor is GaAs.
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