| 摘要 |
PURPOSE:To manufacture a semiconductor device with acceptable noise index by a method wherein a resist applied upon a substrate is selectively exposed to irradiation dosage below the sensitivity of resist to be removed by development using a developer at a temperature below room temperature and then the surface of substrate is dry-etched until specified width is exposed. CONSTITUTION:An N<-> type buffer layer 2, an N-type active layer 3 and an N<++> type high conductive layer 4 are epitaxially grown on a GaAs substrate 1 continuously by vapor growing process. Then ohmic contact metal is selectively evaporated on the layer 4 to form a source electrode 5 and a drain electrode 6. Next, a resist 7 after prebaking process is exposed to ultraviolet rays at specified irradiation dosage through the intermediary of a mask 8 formed in specified pattern. At this time, when the mask 8 is provided with an opening in width of the part corresponding to a gate electrode of mask 8 to be developed by a developer at the temperature below 20 deg.C, the resist at exposed part is removed but the surface of substrate 1 is not exposed. Finally, the part from the opening of resist 7 to the active layer 3 is etched to form a recess part 9 further forming a gate electrode 10 in the recess part 9.
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