| 摘要 |
PURPOSE:To inhibit the disconnection of upper electrodes and the generation of crack by making larger the area of lower electrodes than that of the upper electrodes. CONSTITUTION:In a solid-state image pickup device provided with upper electrodes 1 and lower electrodes 2 formed across an amorphous semiconductor layer 3 on an insulating substrate 5, the area of the electrodes 2 is formed larger than that of the electrodes 1 and also, the amorphous semiconductor layer 3 is provided under each upper electrode lead-out part 4. Thereby, the length of stepped parts of the electrodes 1 is made shorter and also, the stepped configuration of the stepped parts is relaxed, and the disconnection of the electrodes 1 and the generation of crack and so on can be inhibited.
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