发明名称 METHOD FOR WRITING AND READING SEMICONDUCTOR NON-VOLATILE MEMORY DATA
摘要 <p>PURPOSE:To provide a highly reliable writing and reading method by using a check bit as an electrostatic charge injection type and invertionally writing the contents of the program data bits when the bits for injecting charge to a gate exceeds a half of the contents of the program data bits, and when the bits less than a half, reversely processing. CONSTITUTION:The number of '0' bits in the program data obtained from an 8-bit microprocessor or the like is counted up. When the number of '0' bits exceeds a half of the number of program data bits, the data obtained by inverting the ordinary program data are written in an EPROM together with a check bit '0'. Next, the written-in data processed as above are written-in to the EPROM. The programs data are read out from the EPROM, and when the check bit is '0', the contents of the read program data are inverted so as to be used.</p>
申请公布号 JPS62162299(A) 申请公布日期 1987.07.18
申请号 JP19860003757 申请日期 1986.01.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 TOYAMA TAKESHI;KOBAYASHI SHINICHI
分类号 H01L27/10;G11C16/02;G11C17/00;H01L21/8247;H01L29/78;H01L29/788;H01L29/792 主分类号 H01L27/10
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