发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To prevent an IC device from smoking by the generation of heat due to an overcurrent by a method wherein, in the device of a molding-sealed structure, a fuse is integrally inserted in a current path between a power terminal and an earth terminal. CONSTITUTION:In an IC device for motor drive of a molding-sealed structure, a fuse 8 which can be fused by an overcurrent is inserted in series in a power line 21a on the side of a power terminal 21 and this fuse 8 is integrally incorporated in a semiconductor substrate. Thereby, when an output transistor 1 or 2 for loading drive is broken at the time of operation, the fuse 8 is fused by the overcurrent flowing through an output current path between the power terminal 21 and an earth terminal 22. Accordingly, it is eliminated that the temperature of the IC device is raised by the generation of heat and exceeds the ignition temperature of a molding material of the device, thereby protecting the IC device from smoking.
申请公布号 JPS62162347(A) 申请公布日期 1987.07.18
申请号 JP19860003756 申请日期 1986.01.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIKUYAMA SEIICHIRO
分类号 H01L23/58;H01H37/76;H01H85/02;H01H85/46;H01L23/62 主分类号 H01L23/58
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